耐火与石灰 ›› 2018, Vol. 43 ›› Issue (5): 21-23.

• 综述 • 上一篇    下一篇

氮化硅薄膜刻蚀研究

范亚娟   

  1. 中钢集团洛阳耐火材料有限公司, 洛阳471000
  • 出版日期:2018-10-10 发布日期:2018-10-10

Study on etching of silicon nitride thin films

Fan Yajuan   

  1. Sinosteel Refractory Co.,Ltd., Luoyang 471000, China
  • Online:2018-10-10 Published:2018-10-10

摘要:

氮化硅薄膜刻蚀是制造微电子器件的关键技术之一,刻蚀的效果直接影响电子元器件的性能。采用反应离子法对氮化硅薄膜进行了刻蚀,并借助原子力显微镜(AFM)、光学显微镜(OM)、表面轮廓仪表征方法对刻蚀的氮化硅薄膜进行分析。结果表明:反应气体为NH3∶SiH4=40∶10时,制备出的氮化硅薄膜的厚度均匀,薄膜颜色一致;氮化硅薄膜的最佳刻蚀时间为3min,此时氮化硅薄膜的表面较平整,粗糙度较小,氮化硅薄膜与Si基底表面的分界线明显。

Abstract:

Etching of silicon nitride thin films is one of the key technologies for manufacturing microelectronic devices.The etching effect directly influences the performance of electronic components.The silicon nitride film is etched with reactive ion etching method, then the etched silicon nitride film is analyzed with atomic force microscope (AFM),optical microscope (OM) and surface profilometer characterization method.The results show that when the ratio reaction gases is NH3∶SiH4=40∶10,the thickness of the prepared silicon nitride film is uniform,so do the colors;the optimum etching time is 3 minutes,at this time the surface of the silicon nitride film is relatively smooth,and the boundary between the silicon nitride film and the Si substrate surface is distinct.

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