Abstract:

Etching of silicon nitride thin films is one of the key technologies for manufacturing microelectronic devices.The etching effect directly influences the performance of electronic components.The silicon nitride film is etched with reactive ion etching method, then the etched silicon nitride film is analyzed with atomic force microscope (AFM),optical microscope (OM) and surface profilometer characterization method.The results show that when the ratio reaction gases is NH3∶SiH4=40∶10,the thickness of the prepared silicon nitride film is uniform,so do the colors;the optimum etching time is 3 minutes,at this time the surface of the silicon nitride film is relatively smooth,and the boundary between the silicon nitride film and the Si substrate surface is distinct.